2N3955 DATASHEET PDF

2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.

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2N Datasheet(PDF) – InterFET Corporation

This page was last edited on 22 Novemberat The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it vatasheet the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

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The frequency at which dagasheet begins to drop off may be much lower, see below. It was produced exclusively by the Czechoslovakian electronics company Tesla.

It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Other manufacturers around this time also would specify similar values e. It was second sourced by other manufacturers; Texas Instruments listed datasheeh single-diffused vatasheet version of the device in an August datasheet.

PDF 2N3955 Datasheet ( Hoja de datos )

Wikimedia Datasheeet has media related to 2N The art of electronics 2nd ed. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

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KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. Also the higher frequency response has improved performance when used in audio amplifiers.

With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.

Graf; William Sheets In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower xatasheet ratings than the 2N Commons category link from Wikidata.

Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.

The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. RCA by had changed their specification to give 2. Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage datashret, which can cause confusion. Retrieved 31 October By using this site, you agree to the Terms of Use and Privacy Policy.

The KD have higher power and higher current than 2N The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the datasheeh and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.

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The robot builder’s bonanza 2nd ed. Nevertheless, a 2N and many other power transistors originating datzsheet this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.

Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.

TRANSISTOR 2n datasheet & applicatoin notes – Datasheet Archive

Retrieved 7 November Build your own low-power transmitters: The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

In other projects Wikimedia Commons. It has a transition frequency of 2. With an “infinite” heatsink, that is: The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

Modern 2N datasheets often, but not always, specify f T of 2. The 2N is a silicon NPN power transistor intended for general purpose applications.

2N3955 MOSFET. Datasheet pdf. Equivalent

From Wikipedia, the free encyclopedia. Variants with higher voltage ratings e. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.