BF Transistor Datasheet pdf, BF Equivalent. Parameters and Characteristics. BF Datasheet, BF NPN High Voltage Transistor Datasheet, buy BF Transistor. BF BF; BF; NPN High-voltage Transistors. FEATURES Low current ( max. mA) High voltage (max. V).. APPLICATIONS Intended for video.
|Published (Last):||4 December 2014|
|PDF File Size:||14.19 Mb|
|ePub File Size:||7.39 Mb|
|Price:||Free* [*Free Regsitration Required]|
Low voltage PNP power transistor. Product specification Supersedes data of Aug Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Product specification Supersedes data of Sep Low voltage NPN power Darlington transistor.
BF459 Datasheet, Equivalent, Cross Reference Search
Characteristic Symbol Rating Unit. Description in a plastic package using TrenchMOS technology.
A linear amplifier 1. General description NPN general-purpose transistors. Quick reference data Rev. To make this website work, we log user data and share it with processors. They are designed for high speed. Preliminary specification This data sheet contains preliminary data; supplementary data may be datasheer later. Product data sheet Supersedes data of Oct NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.
Secondary protection for DSL lines.
BF Philips Semiconductors, BF Datasheet
Product data sheet Supersedes data of May All leads are isolated More information. N-channel enhancement mode field-effect transistor Rev.
NPN medium power transistor. NPN general-purpose transistors in small plastic packages. High voltage fast-switching NPN power transistor. High oltage Switching Features: BoxTelFax Belarus: Stress above one or more of the limiting values may cause permanent damage to the device. General description NPN general-purpose transistors in small plastic packages.
V SCA63 All rights are reserved. All leads are isolated.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. RF transistor with internal bias circuit.
Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Exposure to limiting dztasheet for extended periods may affect device reliability. High surge current capability. Easy pick and place. Low forward voltage drop.