Symbol. Parameter. Value. Unit. BFY BFY VCBO. Collector-Base Voltage ( IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. BFY51 datasheet, BFY51 pdf, BFY51 data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose. BFY51 Transistor Datasheet pdf, BFY51 Equivalent. Parameters and Characteristics.
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General description PNP general-purpose transistors. Designed for use in general purpose power amplifier and switching applications. BZX series Voltage regulator diodes.
SGS Thomson Microelectronics
Using a similar search at your favorite parts source I bet you can find some other replacements which are cheap and available in your area.
DATA SHEET. BFY50; BFY51; BFY52 NPN medium power transistors DISCRETE SEMICONDUCTORS Apr 22 – PDF
This data sheet contains final product specifications. All leads are isolated. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from darasheet improper use or sale Apr 22 7.
General description NPN general-purpose transistors in small plastic packages. Suitable for applications requiring low noise and good h FE linearity, eg. Email Required, but never shown.
Stress above one or more of the limiting values may cause gfy51 damage to the device. Low voltage PNP power transistor. Designed for general-purpose amplifier and low speed switching applications. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.
No liability will be accepted by the publisher for any consequence of its use. What is a suitable replacement? Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification IC24 Data Handbook.
NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with. BB Low-voltage variable capacitance double diode. If this is in any sort of push-pull amplifier, you should probably replace all the transistors and not just the faulty one to maintain symmetry in the circuit.
Product data sheet Supersedes data of Oct Product data sheet Supersedes data of May High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread bcy51 reliable operation Very high switching speed Applications.
Phil Frost – W8II EdwinvanMierlo A question being on-topic elsewhere does not make it off-topic here. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.
Quick reference data Rev.
V SCA54 All rights are reserved. High-speed switching No secondary breakdown.
It’s also worth trying to see if you can dig up the datasheet on the BFY 51 and compare it’s applicable characteristics to the replacement you are considering. Benefit is lower component count, internal compensation for temperature and current gain spread. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.
All leads are isolated More information. To make this website work, we log user data and share it with processors. BoxTelFax Belarus: I could not find one in the market since they have been discontinued.