BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. C I Region of permissible DC operation.

Publication thereof does not nu2508df nor imply any license under patent or other industrial or intellectual property rights.

BUDF datasheet, Pinout ,application circuits Isc Silicon NPN Power Transistor

Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a darasheet fullpack.

July 2 Rev 1. Typical collector-emitter saturation voltage. This data sheet contains target or goal specifications for product development. July 6 Rev 1. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic bu5208df envelope. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.


No liability will be accepted by the publisher for any consequence of its use. July 5 Rev 1. Typical DC current datasheeet. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.

Application information Where application information is given, it is advisory and does not form part of the specification. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Buaf datasheet, equivalent, cross reference search. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. Forward bias safe operating area.

Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml. High collectorbase voltagevcbov high speed switching.

July 1 Rev 1. Typical base-emitter saturation voltage. Budf philips semiconductors, budf datasheet.


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SOT; The seating plane is electrically isolated from all terminals. Budf transistor equivalent substitute crossreference search. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains final product specifications.

BU2508DF Datasheet PDF

Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. July 7 Rev 1. Silicon diffused power transistor buaf datasheet catalog. Refer to mounting instructions datashewt F-pack envelopes. Typical collector storage and fall time. Stress above one or more bu2508dv the limiting values may cause permanent damage to the device. C 1 Turn-off current. Exposure to limiting values for extended periods may affect device reliability. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

II Extension for repetitive pulse operation. Buaf transistor equivalent substitute crossreference search.