BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Buaf transistor equivalent substitute crossreference search. Exposure to limiting values for extended periods may affect device reliability. C 1 Turn-off current.
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This data sheet contains target or goal specifications for product development. Budf transistor equivalent substitute crossreference search. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.
Bu2508dr 1 Rev 1. Silicon diffused power transistor buaf datasheet catalog. Buaf datasheet, equivalent, cross reference search.
Typical base-emitter saturation voltage. Forward bias safe operating area. July 5 Rev 1. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
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Datashedt data sheet contains final product specifications. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
Silicon dqtasheet power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. Refer to mounting instructions for F-pack envelopes.
Budf philips semiconductors, budf datasheet. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. Stress above one or more of the limiting values may cause permanent damage to the device.
High collectorbase voltagevcbov high speed switching. No liability will be accepted by the publisher for any consequence of its use. Typical DC current gain. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor.
July 6 Rev 1. Application information Where application information is given, it is advisory and does not form part of the specification. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.
BUDF 데이터시트(PDF) – Tiger Electronic Co.,Ltd
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
II Extension for repetitive pulse operation. July 2 Rev 1. SOT; The seating plane is electrically isolated from all terminals. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Reproduction in whole or in part is prohibited dagasheet the prior written consent of the copyright owner.
July 7 Rev 1. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.
Typical collector storage and fall time. Typical collector-emitter saturation voltage.
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet.
C I Region of permissible DC operation.