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Output Current versus Ambient Temperature. Application areas include transducer amplifier, DC gain blocks and all the conventional OP-AMP circuits revrrsible now can be easily implemented in single power supply systems. Supply Current All Amps.

Common mode Rejection Ratio. Normalised continuous drain current.

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Version du septembre This product is supplied in anti-static packaging. Isolation surge voltage is an internal device dielectric breakdown rating. Thermal resistance junction to mounting base Thermal resistance junction to ambient.


Maximum permissible repetitive avalanche current IAR versus avalanche time t p. Large Signal Voltage Gain. Typical turn-on gate-charge characteristics. Large Signal Frequency Response Figure Maximum permissible non-repetitive avalanche current IAS versus avalanche time t p ; unclamped inductive load. Open Loop Frequency Response Figure 6.

Output Characteristics vs Current Sinking Figure C’est un interrupteur qui conduit le courant dans un seul sens. Output Characteristics vs Current Sourcing. Input Current vs Temperature. Rechercher sur le site: N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T. Bendaas M ed Lokman. Current Limiting vs Temperature. Dark Current versus Ambient Temperature Figure 6.

Input Offset Voltage Drift. VDE is a test option. Version du 9 septembre Thermal Resistance Junction-Ambient Max. Rating Symbol Value Unit. La valve la plus simple est la diode.

Common-Mode Input Voltage Range. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

Typical capacitances, Ciss, Coss, Crss. Operating junction and storage temperature range. Operation from split power supplies is also possible so long as the difference between the two supplies is 3 volts to 32 volts. Disponible sur le site http: Collector Current versus Figure 4.


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Input Offset Current Drift. The gate-source coure must be protected against static discharge during transport or handling. The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Rise and Fall Times. Repetitive and non-repetitive avalanche current.

Input Common-Mode Voltage Range. Power Supply Rejection Ratio.